Berlin 2005 – wissenschaftliches Programm
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MA: Magnetismus
MA 20: Poster:Schichten(1-29),Spintrsp(30-45),Ex-Bias(46-63),Spindyn(64-75),Mikromat.(76-80),Cluster(81-94),Abbv.(95-99),Obflm(100-02),SpElek.(103-09),E-Theo(110-14),Mikromag.(115-16),Spin+PÜ(117-26),Mag.Mat.(127-51),Meth.(152-55),Mol.Mag(156-59),Kondo(160-65
MA 20.35: Poster
Montag, 7. März 2005, 14:00–18:00, Poster TU C
Fe on GaAs(110) cleaved edges - magnetic, electrical and optical investigations — •P. Kotissek1, M. Bailleul1,2, M. Sperl1, W. Kipferl1, P. Chen1, W. Wegscheider1 und G. Bayreuther1 — 1Universität Regensburg, 93040 Regensburg — 2CNRS Strasbourg
The aim of our work is to successfully inject spinpolarized carriers from a ferromagnetic metal into GaAs and to varify spin injection by optical methods. The crucial spin dependent resistance is given by the Schottky barrier system (Fe/(n+)GaAs) that is grown epitaxially on the (110) cleaved edge of an n-GaAs substrate. The magnetic properties of the Fe films were investigated by Kerr microscopy and SQUID magnetometry. We also measured the I-V characteristics of Fe/(n+)GaAs Schottky contacts with respect to the temperature to get information about the different transport mechanisms across the Schottky barrier. To gain information about the optical properties of our samples we also measured photoluminescence spectra at low temperatures.
Two different methods are used to detect the spin polarization of the injected electrons: i) via the polar optical Kerr effect and ii) via the circular polarization of the recombination light of the injected electrons with unpolarized holes.