Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 28: Methodisches (Exp. und Theorie)
O 28.3: Vortrag
Samstag, 5. März 2005, 15:30–15:45, TU EB407
Resonant inelastic soft x-ray scattering probing semiconductor surface adsorbate dynamics — •Franz Hennies1, Alexander Föhlisch1, Annette Pietzsch1, Mitusuru Nagasono1, Nadine Wittkowski2, Stina Matsson3, Maria-Novella Piancastelli3, and Wilfried Wurth1 — 1Universität Hamburg, Institut für Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg — 2Laboratoire d’ Optique des Solides, Université Pierre et Marie Curie, Paris, France — 3Department of Physics, Uppsala University, Sweden
Resonant inelastic x-ray scattering (RIXS) probes the valence electronic structure of a system in an atom specific and symmetry selective manner. Furthermore, the method is sensitive to dynamic properties of the core excited intermediate state. In recent years the method has been utilized to investigate adsorbates on metal surfaces, leading to an improved understanding of the surface chemical bond [1].
We have now investigated adsorbates on a semiconductor surface, i.e. simple hydrocarbons on the Si(001)-(2x1) surface with selectively excited, fully polarization and symmetry resolved RIXS at beamline I511 at MAXLab in Lund, Sweden. The electronic structure information which we obtain supports theoretical adsorption models. In contrast to metals a clear signature of dynamic processes in the core-excited state has been observed. We will present our results and suggest theoretical interpretation schemes. This work is supported by grant Fo343/1-1 of the Deutsche Forschungsgemeinschaft.
[1] A. Nilsson and L.G.M. Pettersson, Surf. Sci. Rep. 55, 49 (2004)