Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 36: Postersitzung (Elektronische Struktur, Grenzfl
äche fest-flüssig, Halbleiteroberfl
ächen und -grenzfl
ächen, Nanostrukturen, Oberfl
ächenreaktionen, Teilchen und Cluster, Struktur und Dynamik reiner Oberfl
ächen)
O 36.49: Poster
Montag, 7. März 2005, 15:00–18:00, Poster TU F
Study of metal cluster growth on rare gas layers using STM and UPS — •F. Ghaleh1, D. Boecker1, T. Irawan1, H. Hövel1, C. Yin2, and B. von Issendorff2 — 1Experimentelle Physik I, Universität Dortmund, D-44221 Dortmund — 2Fakultät für Physik, Universität Freiburg, D-79104 Freiburg
The growth of metal clusters on rare gas films, as described in Ref. 1 was studied using a combination of different techniques on the same sample. UPS was used for monitoring the growth of rare gas layers with a well defined thickness of up to 100 monolayers. Then metal atoms (Au or Pb) were deposited on these surfaces. UPS spectra for different rare gas film thicknesses and different substrate materials (HOPG, Au and Pb) taken in normal and oblique electron emission indicate that several ten monolayers of rare gas are needed for a complete decoupling of the clusters and the substrate. The morphology could be checked also after rare gas desorption using STM. For metal substrates the change of morphology from islands to flat layered structures was observed when the sample had been warmed up to room temperature. In future experiments we will extend these studies to the deposition of mass selected clusters and a comparison to experiments for the same clusters in a free cluster beam.
[1] V.N. Antonov, J.S. Palmer, A.S. Bhatti, J.H. Weaver, Phys. Rev. B 68, 205418 (2003).