Berlin 2005 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 39: Nanostrukturen IV
O 39.5: Vortrag
Dienstag, 8. März 2005, 11:45–12:00, TU EB420
Lead on hydrogen terminated Si(111)1x1: STM and surface x-ray diffraction — •C. Rettig1, V. Chamard2, T.-L. Lee3, J. Zegenhagen3, and H. Hövel1 — 1Universität Dortmund, Experimentelle Physik I, D-44221 Dortmund — 2CNRS, laboratoire de thermodynamique et physico-chimie metallurgique, B.P. 75, F-38402 St Martin d’hères — 3European Synchrotron Radiation Facility (ESRF), B.P. 220, F-38043 Grenoble
We studied the growth of Pb on Si(111):H 1x1. The hydrogen termination leads to a chemically inert surface and results in a well defined modification of the Pb/Si interface if we compare our data to experiments for Pb on Si(111)7x7 deposited at T<270K in UHV. Recently for this system a uniform-height island growth was observed due to quantum well states, which lead to energy minima every second ML in height [1]. We characterised the growth mode of Pb on Si(111):H 1x1 at room temperature, changing the deposition amount from 2ML to 20ML, by using STM and SXRD (Surface X-Ray Diffraction) without breaking in-situ UHV conditions. The SXRD data show the growth of exclusively Pb(111) planes parallel to the Si(111) plane and exhibit a beating pattern similar to the results of Pb on Si(111)7x7 [2], which may indicate a quasibilayer growth of the Pb clusters already at room temperature. In addition we characterised the morphology for different deposition temperatures (10K, 50K, 150K, 300K) with STM at 77K. In all cases we observed a 3D island structure of the Pb deposit.
[1] M. Hupalo et al., Phys. Rev. B 64, 155307 (2001).
[2] P. Czoschke et al., Phys. Rev. Lett. 93, 036103 (2004).