Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 41: Elektronische Struktur III
O 41.6: Vortrag
Dienstag, 8. März 2005, 12:00–12:15, TU EB107
The electron-phonon coupling on Mg(0001) — •T. Kim1, T.S. Sørensen1, E. Wolfring1, H. Li2, E.V. Chulkov3, and Ph. Hofmann1 — 1Institute for Storage Ring Facilities, University of Aarhus,8000 Aarhus C, Denmark — 2Department of Physics, Zhejiang University,Hangzhou 310027, China — 3Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain
The influence of many-body effects on surface state lifetimes, and in particular the role of the electron-phonon coupling, has recently attracted considerable attention. Work has mostly concentrated on surface states located in wide gaps of the projected band structure, such as the L-gap surface states of the (111) noble metal surfaces or the surface state on Be(0001). Here we report results from the deeply penetrating surface state which is located in a narrow gap at the Brillouin zone centre of Mg(0001). The temperature-dependent photoemission linewidth of this state is used to determine the electron-phonon mass enhancement parameter λ. λ, as well as the electron-electron contribution to the surface state linewidth at zero temperature, are compared to first-principles calculations and good agreement is found.