Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 45: Organische Dünnschichten IV
O 45.2: Vortrag
Dienstag, 8. März 2005, 16:00–16:15, TU EB301
Diffusion and Chemical Reaction at the Interfaces between Metals and the PTCDA — •Gianina Gavrila1, Mihaela Gorgoi1, Reinhard Scholz1, Walter Braun2, and Dietrich R.T. Zahn1 — 1Institut für Physik, Technische Universität Chemnitz, D-09107, Chemnitz, Germany — 2BESSY GmbH, Albert-Einstein-Straße 15, D-12489 Berlin, Germany
The electronic and chemical and properties of interfaces in organic devices are decisive for charge carrier injection and transport. Metal/organic interfaces can undergo complex and spatially extended chemical interactions. In and Mg metals were deposited onto 3,4,9,10-perylene tetracarboxylic-dianhydride (PTCDA). The interface formation is analyzed via High Resolution Soft X-ray Photoemission Spectroscopy. The experimentally observed C1s, O1s, In4d and Mg2p core level emission intensities together with the valence band evolution upon metal deposition are compared to data from previous study [1]. Additionally, the differences between the two metals are emphasized and a new model for the formation of the In/PTCDA interface is proposed. The photoemission results are correlated with the near edge X-ray absorption spectroscopy spectra taken at the C K-edge and O K-edge. [1] Y. Hirose, A. Kahn, V. Aristov, P. Soukiassian, Appl. Phys. Lett. 68 (2), 1996.