Berlin 2005 – wissenschaftliches Programm

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O: Oberflächenphysik

O 49: Epitaxie und Wachstum II

O 49.4: Vortrag

Dienstag, 8. März 2005, 16:30–16:45, TU EB407

Facet and layer formation of II-VI semiconductors on GaSe van der Waals terminated Si(111) — •Bengt Jaeckel, Rainer Fritsche, Andreas Klein, and Wolfram Jaegermann — Darmstadt University of Technology, Surface Science Division, Department of Materials Science, Petersenstr. 23, 64287 Darmstadt

The growth of II-VI-semiconductors on GaSe terminated Si(111) is investigated with Scanning Tunneling Microscopy (STM) and Low Energy Electron Diffraction (LEED). CdS, CdSe, ZnS and ZnSe are evaporated from effusion cells filled with compound material. The growth temperature is varied from room temperature up to 300^∘C. Annealing steps are also performed to investigate reorganization phenomena.
Nucleation occurs preferred at step-edges or defect sites. On the bare terraces nearly no nucleation takes place. For higher temperatures larger clusters are observed which are better orientated to the substrate. Annealing of films deposited at room temperature leads to a reorganization and to an increased crystallinity with orientation to the GaSe passivated Si(111)-substrate surface.
Interestingly, during the annealing procedures of high temperature films the surface morphology passes through highly facetted surfaces with different kinds of facet-planes. In the case of CdS a closed (111)-orientated film is formed at higher annealing temperatures (300^∘C) and is also well oriented towards the GaSe:Si(111)-substrate.