Berlin 2005 – wissenschaftliches Programm

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SYFS: Nichtflüchtige Festkörperspeicher

SYFS 1: Overview, phase change and nanocrystal memories

SYFS 1.1: Hauptvortrag

Samstag, 5. März 2005, 14:00–14:30, TU HE101

Physical aspects and technical prospects of nonvolatile memories — •Heinrich Kurz — Institute of Semiconductor Electronics, RWTH Aachen University, Germany

Retaining data for years when unpowered is crucial for the most handheld electronic communication systems. Today non-volatile memories are dominated by flash concepts with various derivatives. Flash memories will face severe technological problems approaching the 65 nanometer technology node. Among the alternatives PC-RAM appears particularly attractive from physical point of view. Principally the performance of non-volatile memory should improve when the cell size is scaled down beyond the 65 nanometer node. In this talk the physical aspects and technical prospects of the PC-RAM technology will be discussed. In addition self-organization phenomena, recently explored for fabrication of highly dense nanostructures, are shown to open the way to extensions of current technologies towards extremely high storage densities. Examples in the field of quantum dot flash-memories and magnetic mass storage systems will be given.