Berlin 2005 – wissenschaftliches Programm

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SYFS: Nichtflüchtige Festkörperspeicher

SYFS 4: Poster

SYFS 4.7: Poster

Samstag, 5. März 2005, 08:30–16:30, Poster TU C

Ferroelectric nanostructure arrays grown by PLD using metal nanotube membranes as deposition masks — •Sung Kyun Lee, Woo Lee, Marin Alexe, Kornelius Nielsch, and Dietrich Hesse — Max-Planck-Institut of Microstructure Physics Halle, Germany

Non-volatile ferroelectric random access memories (NV-FRAMs) with high memory density require the preparation of ferroelectric nanostructure arrays with a lateral size of the individual nanostructure in the range of 100 nm. Lead zirconate titanate Pb(Zr,Ti)O₃ (PZT) and lanthanum-substituted bismuth titanate Bi_3.25La_0.75Ti₃O₁₂ (BLT) are the most favourable materials for this purpose. Well-oriented epitaxial nanostructures have the advantage of uniform ferroelectric cell-to-cell properties. Pulsed laser deposition (PLD) is a suitable method to grow well-oriented PZT and BLT films. Using deposition masks made from metal nanotube membranes, partially or fully well-oriented BLT and PZT nanostructure arrays have been prepared by PLD. Their structure and morphology are investigated by AFM, XRD pole figures, and (HR)TEM. The ferroelectric properties are determined by piezoresponse-scanning force microscopy (PFM). Well-developed ferroelectric hysteresis curves have been obtained from switchable nanostructures of about 100 nm lateral size.