Berlin 2005 – wissenschaftliches Programm
SYOO 6.39: Poster
Montag, 7. März 2005, 18:00–20:00, Poster TU A
P(VDF/TrFE) as a ferroelectric dielectric for Organic Field effect Transistors in MFIS structure — •Karsten Henkel, Ioanna Paloumpa, Klaus Müller, and Dieter Schmeißer — Brandenburgische Technische Universität Cottbus, Angewandte Physik-Sensorik, 03013 Cottbus, P.O.Box 101344, Germany
MFIS structures consisting of metal, ferroelectric poly[vinylidene fluoride trifluoroethylene](P[VDF/TrFE]), insulator, semiconductor (Si) are fabricated and the influence of the polarization of the P(VDF/TrFE) on the CV characteristics of these structures is investigated. We find a characteristic ferroelectric hysteresis in the CV curves upon increasing the voltage scan window (e.g.-U...U,U=6...30V, |UP(VDF/TrFE)|≤15V, dP(VDF/TrFE)=300 nm). A writing process with adequate electric fields causes large shifts in the flatband voltage ( Δ UFB>4V for the quoted example before) which are stable over days. We report on our investigations which focus on the switching behavior by varying the parameters like polymer thickness, writing field strength and time, long time stability, reversing voltage and insulating material (SiO2, PMMA (Polymethylmetacrylate)). This material combination is favorable for transfer into our full organic concept of field effect transistors for application as a nondestructive readout memory (NDRO) cell.