Berlin 2005 – wissenschaftliches Programm
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VA: Vakuumphysik und Vakuumtechnik
VA 3: Vakuumverfahren und Komponenten 1
VA 3.3: Vortrag
Montag, 7. März 2005, 14:50–15:10, TU E20
Inductively coupled HF Plasma beam source for Ion beam assisted deposition in a boxcoater — •M. Klosch1, H.-J. Eifert1, H. Hagedorn2, and R. Beckmann2 — 1FH Gießen-Friedberg, University of Applied Sciences, Wilh.-Leuschner-Str. 13, D-61169 Friedberg — 2Leybold Optics GmbH, Siemensstr. 88, D-63755 Alzenau
Dielectric films are commonly produced by evaporating dielectric material in a so called boxcoater. In order to improve film properties like stress and film density Kaufman type like ion beam sources were used so far. The drawback of these sources is the weak stability due to the use of a neutralisation filament and the limited substrate area that can be irradiated homogeneous.
A new type of ECWR plasma beam sources - the Leybold LION source - performs a homogeneous ion beam density over areas larger than 1 square meter. A simulation program to calculate the ion beam distribution on the substrate holder is presented and results are compared with measurements. Ion energy distribution measurements shows that the ion energy can be adjusted between 35 eV and 350 eV. Increasing the HF-Power the ion beam current increases nearly linearly.
By ion beam assisted deposition using the LION source the refractive index of TiO2 films is homogeneous ( delta smaller than +/- 0,005) and can be adjusted between 2,20 and 2,42 at 550 nm.