Dresden 2006 – wissenschaftliches Programm
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DF: Dielektrische Festkörper
DF 1: Internal Symposium “Integrated Electroceramic Functional Structures”
DF 1.10: Vortrag
Montag, 27. März 2006, 12:50–13:10, M{\"U}L Elch
Simulation of electronic transport in nanoscale ferroelectric tunnel junctions — •Klaus Michael Indlekofer1 and Hermann Kohlstedt2 — 1Institute of Thin Films and Interfaces (ISG-1) and Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Jülich GmbH, D-52425 Jülich, Germany — 2Institute for Solid State Research (IFF) and Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Jülich GmbH, D-52425 Jülich, Germany
The usage of nanoscale ferroelectric films as tunnel barriers in electronic devices offers a unique possibility to study the physics of ultrathin ferroelectric materials by means of electronic transport. By use of a nonequilibrium Green’s function approach in combination with a self-consistent Hartree potential we have simulated the current-voltage characteristics of a metal-ferroelectric-metal tunnel junction. Such an approach offers a consistent treatment of quantum interference und tunnel effects under the influence of ferroelectric polarization charges.
In this presentation, we discuss the role of quantum effects (such as Friedel oscillations) and depletion regions, which lead to deviations from the conventional semiclassical description of contacts in such a tunneling structure. In the simulated I-V characteristics we observe a well-pronounced bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier. Ferroelectric tunnel junctions in general might be a first step into a new class of application-relevant tunnel systems. [1]
[1] K. M. Indlekofer and H. Kohlstedt, Europhys. Lett. 72, 282 (2005)