Dresden 2006 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF 2: Dielectric and Ferroelectric Thin Films and Nanostructures I

DF 2.3: Vortrag

Montag, 27. März 2006, 15:30–15:50, M{\"U}L Elch

GROWTH, MICROSTRUCTURE AND PROPERTIES OF EPITAXIAL, ANTIFERROELECTRIC PbZrO₃ FILMS ON SrRuO₃ - COVERED SrTiO₃ SINGLE-CRYSTAL SUBSTRATES — •Ksenia Boldyreva, Ionela Vrejoiu, Gwenael LeRhun, Lucian Pintilie, Nikolai Zakharov, Marin Alexe, and Dietrich Hesse — Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany

Epitaxial, antiferroelectric PbZrO₃ (PZO) films have been grown by pulsed laser deposition on SrRuO₃-covered SrTiO₃ (STO) single crystal substrates. Due to its good lattice match with the STO substrate and due to the possibility to obtain atomically flat surfaces by a layer-by-layer growth mode, epitaxial SrRuO₃ was used as bottom electrode allowing electrical measurements. XRD analyses and TEM, HRTEM and SAED investigations revealed a (120) preferred orientation of the PZO films. Since the films were grown above the nominal antiferroelectric Curie temperature of 230^oC (to let cubic PZO grow epitaxially on cubic SRO/STO), the cooling after deposition leads to the spontaneous formation of crystallographic domains during the phase transition. As shown by XRD pole figures and TEM images, there are four kinds of domains in the orthorhombic PZO film. These domains also have the character of antiferroelectric domains. The antiferroelectric properties of the films are under study by piezoresponse scanning force microscopy and by macroscopic ferroelectric measurements.