Dresden 2006 – wissenschaftliches Programm
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DF: Dielektrische Festkörper
DF 7: Dielectric and Ferroelectric Thin Films and Nanostructures II
DF 7.7: Vortrag
Mittwoch, 29. März 2006, 16:30–16:50, K{\"O}N Farb
COMBINING HALF-METALS AND MULTIFERROICS FOR SPINTRONICS — •Hélène Béa1, Manuel Bibes2, Gervasi Herranz1, Martin Sirena1, Karim Bouzehouane1, Stephane Fusil3, Eric Jacquet1, Jean-Pierre Contour1, Patrycja Paruch4, Matt Dawber4, and Agnès Barthélémy1 — 1Unité Mixte de Physique CNRS-Thales, RD 128, 91767 Palaiseau, France — 2Institut d’Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France — 3Université d’Evry, Bât. des Sciences, rue du Père Jarlan, 91025 Evry, France — 4Condensed Matter Physics Department, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva 4, Switzerland
Multiferroic materials possess simultaneously ferroelectric and ferro- or antiferromagnetic orders and a coupling between the two order parameters. A first step towards fabrication of magnetoelectric functional devices is to grow these materials as thin films. One of the best candidates is BiFeO3 (BFO) which shows ordered states at high temperatures (it is antiferromagnetic below TN = 647 K and ferroelectric below TC = 1043 K). We have explored the influence of deposition pressure and temperature on the growth of BFO thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BFO films are obtained in a narrow region close to 10−2 mbar and 580∘C. We have characterized the structural and functional properties of BFO/La2/3Sr1/3MnO3 (LSMO) bilayers. We show that the BFO layer has a ferroelectric tunnel barrier behavior. This would open a way to combine the half-metal properties of LSMO with the multiferroic properties of BFO in devices.