Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 10: Thin organic films I
DS 10.1: Vortrag
Dienstag, 28. März 2006, 09:30–09:45, GER 38
Application of infrared spectroscopic ellipsometry in studies of electrochemically grafted thin organic monolayers — •K. Roodenko1, J. Rappich2, R. Hunger3, M. Gensch1, A.G. Güell4, Th. Dittrich5, A. Merson6, Y. Shapira6, N. Esser1, and K. Hinrichs1 — 1ISAS-Institute for Analytical Sciences, Dept. Berlin, Albert-Einstein-Str. 9, 12489, Berlin, Germany — 2Hahn-Meitner Institute Berlin GmbH, Abt. SE1, Kekulestr. 5, 12489 Berlin — 3Institute of Material Science, TU Darmstadt, Petersenstr. 63, 64287 Darmstadt, Germany — 4Dept. Quimica Fisica, Universitat de Barcelona, c/ Marti i Franques, 108028 — 5Hahn-Meitner Institute Berlin GmbH, Abt. SE2, Glienicker Str. 100, 14109 Berlin — 6Dept. of Physical-Electronics, Faculty of engineering, Tel-Aviv University, 69978, Tel-Aviv, Israel
Infrared spectroscopic ellipsometry (IR-SE) is a non-destructive method, which is based on measuring of changes in the polarization state of radiation upon reflection from a sample. When performed in the infrared spectral range, information on molecular composition and structure can be gained through the absorption bands of molecular vibrations. Due to its high sensitivity, this method was applied to study electrochemically grafted organic thin films, such as methoxybenzene and nitrobenzene, on silicon substrates. Formation of the organic layer was confirmed by this method [1], as well as the formation of silicon oxide under certain grafting conditions. A model for competing processes during electrochemical grafting was developed by cross-referencing the IRSE results with synchrotron XPS results.
[1]. M. Gensch et al, J. Vac. Sci. Technol. B 23, 1838 (2005)