Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 10: Thin organic films I
DS 10.6: Vortrag
Dienstag, 28. März 2006, 10:45–11:00, GER 38
Real-time observation of organic semiconductor growth: Evolution of structure and surface morphology — •S. Kowarik1,2, A. Gerlach1,2, S. Sellner1, F. Schreiber1, J. Pflaum3, L. Cavalcanti4, and O. Konovalov4 — 1Institut für Angewandte Physik, Universität Tübingen, Auf der Morgenstelle 10, 72076 Tübingen — 2Physical and Theoretical Chemistry Laboratories, Oxford University, South Parks Road Oxford OX1 3QZ — 3Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart — 4ESRF, 6, rue Jules Horowitz-B.P.220, 38043, Grenoble, Cedex 9, France
We use in-situ real-time X-ray scattering during growth of the organic semiconductors rubrene and diindenoperylene (DIP) to study the evolution of the film structure with time. We manage to produce "movies" of the changes in reflectivity and grazing incidence diffraction (GID) during organic molecular beam deposition. These measurements yield structural and morphological information for a range of film thicknesses, and also contain information about the dynamics of growth. For DIP we identify structural transitions during growth and follow the evolution of the surface morphology. For rubrene we find a relatively low surface roughness (sigma below 15 Å for thicknesses up to at least 600 Å) and a significant delay in the onset of roughening with thickness. This anomalous behavior may be related to conformational changes in the early stages of the growth.