Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Dünne Schichten
DS 14: Growth of thin films
DS 14.1: Vortrag
Mittwoch, 29. März 2006, 14:00–14:15, GER 38
Sputtering of Cr-Mn-O thin films — •Philip Dellinger and Dieter Mergel — Thin film working group, Physics Department, University Duisburg-Essen, 45117 Essen
Thin films have been prepared by rf-diode sputtering of a Cr2MnO4 target. Substrate temperature and oxygen content in the sputter gas have been varied.
The packing density of the films increases with increasing substrate temperature. The refractive index at 1000 nm, as obtained from transmittance measurements by dielectric modelling, varies between 2.2 and 2.7.
The x-ray diffractograms do not allow a unique interpretation. Some samples exhibit only peaks that are unambiguously due to Cr2O3. Other samples are ’mixed’ in that they exhibit peaks that could be attributed to Cr2O3 as well as to Cr2MnO4. EDX-analysis gives a nearly stoichiometric ratio of [Cr]/[Mn] of 2/1 for all samples. The Raman spectra of the two groups of samples do not show significant differences.