Dresden 2006 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 17: Ion beam solid interaction II

DS 17.3: Vortrag

Donnerstag, 30. März 2006, 11:45–12:00, GER 37

SHI Induced Phase Formation At NiO/Si-Interfaces — •Wolfgang Bolse¹, Christian Dais¹, Thunu Bolse¹, Siegfried Klaumünzer², Peter Schubert-Bischoff², and Jörg K.N. Lindner³ — ¹Institut für Strahlenphysik, Universität Stuttgart — ²Hahn-Meitner-Institut, Berlin — ³Institut für Physik, Universität Augsburg

In the course of a systematic investigation of the modification of thin oxide films on Si by swift heavy ion irradiation we found that distinct phase formation and phase separation occurs at the NiO/Si-interface. The NiO was deposited onto untreated Si-wafers by means of reactive magnetron sputtering.. The irradiation was performed at 80 K with 140 - 600 MeV Kr-, Xe- and Au-ions at fluences up to 10¹⁶/cm². The interfaces were characterized utilizing Rutherford Backscattering Spectrometry (RBS), High Resolution Transmission Electron Microscopy, Energy Filtered Transmission Electron Microscopy (EFTEM) and Energy Dispersive X-ray spectroscopy (EDX). On top of the subtrate an undulated layer forms, which according to EDX and EFTEM contains only Si and Ni and is thus attributed to the NiSi₂-phase also found with RBS. This layer is sharply separated from a region containing Ni, O and Si, which according to RBS refers to NiSiO₃. The Silicate is followed by NiO. The undulation and the formation of the high-temperature, high-pressure phase NiSiO₃ clearly reflect the extreme non-equilibrium conditions in the excited ion track, which obviously govern the phase formation at the NiO/Si interface.