DS 18: Thin semiconducting films
Donnerstag, 30. März 2006, 09:30–11:15, GER 38
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09:30 |
DS 18.1 |
Characterisation of Si and SiGe layers with different strain by spectroscopic ellipsometry — •Jürgen Moers, Dan Mihai Buca, and Siegfried Mantl
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09:45 |
DS 18.2 |
On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) — •Thomas Schroeder, Christian Wenger, and Hans-Joachim Müssig
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10:00 |
DS 18.3 |
Preparation and characterization of rare earth scandate thin films for high-κ applications — •M. Wagner, T. Heeg, J. Schubert, C. Zhao, M. Caymax, St. Lenk, and S. Mantl
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10:15 |
DS 18.4 |
Atomic vapour deposition of high-k HfO2: Growth kinetics and electrical properties — •Anil Mane, Christian Wenger, Jarek Dabrowski , Grzegorz Lupina, Thomas Schroeder, Gunther Lippert, Roland Sorge, Peter Zaumseil, Günter Weidner, Ioan Costina , Hans-Joachim Müssig, Sergej Pasko , Ulrich Weber, Vincent Méric , and Marcus Schumacher
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10:30 |
DS 18.5 |
Hauptvortrag:
Formation and Decay of Si/Ge Nanostructures at the Atomic Level — •Bert Voigtländer
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