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Dresden 2006 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 18: Thin semiconducting films

Donnerstag, 30. März 2006, 09:30–11:15, GER 38

09:30 DS 18.1 Characterisation of Si and SiGe layers with different strain by spectroscopic ellipsometry — •Jürgen Moers, Dan Mihai Buca, and Siegfried Mantl
09:45 DS 18.2 On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) — •Thomas Schroeder, Christian Wenger, and Hans-Joachim Müssig
10:00 DS 18.3 Preparation and characterization of rare earth scandate thin films for high-κ applications — •M. Wagner, T. Heeg, J. Schubert, C. Zhao, M. Caymax, St. Lenk, and S. Mantl
10:15 DS 18.4 Atomic vapour deposition of high-k HfO2: Growth kinetics and electrical properties — •Anil Mane, Christian Wenger, Jarek Dabrowski , Grzegorz Lupina, Thomas Schroeder, Gunther Lippert, Roland Sorge, Peter Zaumseil, Günter Weidner, Ioan Costina , Hans-Joachim Müssig, Sergej Pasko , Ulrich Weber, Vincent Méric , and Marcus Schumacher
10:30 DS 18.5 Hauptvortrag: Formation and Decay of Si/Ge Nanostructures at the Atomic Level — •Bert Voigtländer
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