Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Poster presentation
DS 24.25: Poster
Dienstag, 28. März 2006, 15:00–17:30, P2
Parameter screening for the chemical vapour deposition of BN films in the system B-N-H-F — •Jens Matheis, Dimitrios Sapounas, and Achim Lunk — Institute for Plasma Research, University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart, Germany
Cubic boron nitride (c-BN) is still an interesting material for protection layers as well as for applications in electronics. Up to now, a lot of different approaches where made to deposit c-BN layers in a µ m range without internal stress. Mostly depositions were realized by plasma enhanced physical vapour deposition (PEPVD), using high energy ion bombardment. The stress can be reduced by lowering ion energy in com-bination with plasma enhanced chemical vapour deposition (PECVD). For the application of PECVD we have performed a parameter screening, varying the gas mixtures and the fluxes in the system B-N-H-F for BN-deposition.
Equilibrium state calculations were performed with different gas mixtures of the B-N-H-F-system. The programs CEA and KINTECUS were applied. Also the system Ar-BF3-N2-H2 was calculated for comparison with data from literature. The results achieved in the system BF3-N2-H2 show a good agreement with those obtained by EKVICALC.
For different gas mixtures we present and discuss the parameter ranges where deposition of BN is possible up to temperatures of 1500 K. We found that the relations of B to F as well F to H are crucial parameters for the BN formation. In a further step results will be presented of calculations outside of the thermodynamical equilibrium, including surface reactions and plasma stimulated reactions.