Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Poster presentation
DS 24.72: Poster
Dienstag, 28. März 2006, 15:00–17:30, P2
Growth of thin epitaxial titanium nitride films by using hyperthermal particle fluxes — •A. Wolfsteller, J.W. Gerlach, T. Höche, and B. Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung (IOM) e.V., Permoserstr. 15, D-04318 Leipzig
In order to achieve a higher complexity and versatility of the conventional ion beam assisted deposition of metal nitride films, the metal component having thermal energies can be replaced with the metal component possessing hyperthermal energies. Here, results on the ion beam assisted deposition of thin TiN films by using hyperthermal titanium ions are presented. Hyperthermal titanium ions were produced by a pulsed dc vacuum arc metal plasma source, while a constricted glow-discharge plasma source delivered hyperthermal nitrogen ions The TiN films were deposited at various substrate temperatures on Al2O3(0001) and MgO(100) substrates, simultaneously. Thus, substrate influences on the film growth could be identified and separated from influences arising from the ion beam parameters. During the deposition, the surface structure of the films was monitored by RHEED. The crystallographic structure and texture was investigated by XRD. High resolution TEM was used to examine the morphology and defect structure of the films. The results show that the TiN films are epitaxial even at room temperature, indicating the beneficial effect of the hyperthermal energy of the particles involved in the deposition process. The influences of the different substrates and the ion beam parameters on the crystalline quality of the films are discussed.