Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 3: Thin film analysis I
DS 3.3: Vortrag
Montag, 27. März 2006, 10:30–10:45, GER 38
Growth and roughness evolution of sputtered aluminum oxide films on organic and inorganic substrates — •S. Sellner1,2,3, A. Gerlach3,4, S. Kowarik3,4, F. Schreiber3,4, N. Kasper1,5, H. Dosch1,2, S. Meyer6, J. Pflaum6, and G. Ulbricht7 — 1MPI für Metallforschung, Stuttgart — 2Institut für Theoretische und Angewandte Physik, Universität Stuttgart — 3Institut für Angewandte Physik, Universität Tübingen — 4Physical and Theoretical Chemistry Laboratory, Oxford University — 5ANKA, FZ Karlsruhe — 6III. Physikalisches Institut, Universität Stuttgart — 7MPI für Festkörperforschung, Stuttgart
Aluminum oxide is an important material in thin film technology. One critical parameter in thin film growth is the roughness evolution of a growing film with film thickness (σ = Lβ). We present a comparative study of the growth of sputtered aluminum oxide films on silicon oxide and on organic films of diindenoperylene (DIP). From X-ray diffraction measurements we extract the scaling exponent β of aluminum oxide growth on both substrates. By renormalising the aluminum oxide roughness by the roughness of the underlying organic film we find good agreement with β as obtained from the aluminum oxide on silicon oxide (β=0.37), suggesting a remarkable similarity of the aluminum oxide growth on the two substrates under the conditions employed. We emphasize that aluminum oxide layers deposited on top of organic films have shown the potential to serve as encapsulation material in organic devices and to strongly enhance the thermal stability of the organic films.
[1] Sellner et al., Adv. Mater. 16 (2004)
[2] Sellner et al., J. Mat. Res., in print