Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 14: II-VI semiconductors I
HL 14.4: Vortrag
Dienstag, 28. März 2006, 11:45–12:00, POT 151
Optical and microelectrical characterization of ZnO single crystals implanted with group V elements — •Matthias Brandt1, Holger von Wenckstern1, Gabriele Benndorf1, Jörg Lenzner1, Heidemarie Schmidt1, Michael Lorenz1, Marius Grundmann1, Gabriel Braunstein2, and Gerhard Brauer3 — 1Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany — 2University of Central Florida, Department of Physics, Orlando, Florida, USA — 3Institut für Ionenstrahlphysik und Materialforschung, FZ Rossendorf, Dresden, Germany
We have implanted ZnO single crystals produced by pressurized melt growth with nitrogen, phosphorous and arsenic ions, as well as with argon. The samples have been annealed at temperatures ranging from 300 to 1000∘C in an oxygen atmosphere for 45 minutes or in air for 60 minutes. They were characterized optically by cathodoluminescence and photoluminescence measurements and electrically by scanning capacitance microscopy and scanning surface potential microscopy. Results have been compared to the properties of as-grown samples. We find a strong dependence on a) the implanted species and b) the annealing temperature. An intense donor-acceptor pair transition was observed in luminescence of N-implanted crystals annealed at 700∘C only. Strong indication for a p-type conductivity surface layer was found for P-implanted ZnO annealed at 700∘C.