Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 21: Transport properties I

HL 21.1: Vortrag

Dienstag, 28. März 2006, 16:30–16:45, BEY 118

DENSITY-OF-STATES IN MICROCRYSTALLINE SILICON FROM THERMALLY-STIMULATED CONDUCTIVITY — •Nacera Souffi, Rudolf Brüggemann, and Gottfried H. Bauer — Institut für Physik, Carl von Ossietzky Universität Oldenburg, D-26111 Oldenburg

The technique of thermally stimulated currents has been applied to extract the density-of-states profile in microcrystalline silicon. Exploiting the experimental parameter space a consistent density-of-states profile emerges with an exponential conduction band tail and a broader deeper distribution. Calibrating the absolute density of states profile from other techniques like modulated photoconductivity, steady-state photocarrier grating technique and intensity-dependent photoconductivity allows a determination of the capture coefficient of the probed localised states.