Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 21: Transport properties I
HL 21.12: Vortrag
Dienstag, 28. März 2006, 19:15–19:30, BEY 118
Non-linear I-V characteristics of nano-transistors in the Landauer-Büttiker formalism — •Ulrich Wulf1,2, Paul Racec2,3, and Alexandru Nemnes4,5 — 1Technische Universität Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany — 2IHP/BTU Joint Lab, Postfach 101344, 03013 Cottbus, Germany — 3National Institute of Materials Physics, PO Box MG-7, 077125 Bucharest Magurele, Romania — 4Institut für Physik, Technische Universität Chemnitz, — 5University of Bucharest, Faculty of Physics, PO Box MG-11, 077125 Bucharest Magurele, Romania
We present the non-linear I-V characteristics of a nanoscale metal-oxide-semiconductor field-effect-transistor in the Landauer-Büttiker formalism. In our three-dimensional ballistic model the gate, source and drain contact are treated on an equal footing. As in the drift-diffusion regime for ballistic transport a saturation of the drain current results. We demonstrate the quantum mechanism for the ballistic drain current saturation. As a specific signature of ballistic transport we find a specific threshold characteristic with a close-to-linear dependence of the drain current on the drain voltage. This threshold characteristic separates the ON-state regime from a quasi OFF-state regime in which the device works as a tunneling transistor. Long- and short-channel effects are analyzed in both regimes and compared qualitatively with existing experimental data by INTEL [B. Doyle et al., Intel Technol. J. 6, 42, (2002)].