Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 22: Semiconductor laser II

HL 22.2: Vortrag

Dienstag, 28. März 2006, 15:30–15:45, BEY 154

2.5 Gbit/s data transmission and 800 mW single mode filamentation free operation of InAs/InGaAs quantum dot lasers emitting at 1.5 µm — •T. Kettler¹, L.Ya. Karachinsky², G. Fiol¹, M. Kuntz¹, K. Posilovic¹, A. Lochmann¹, O. Schulz¹, L. Reissmann¹, N.Yu. Gordeev², I.I. Novikov², M.V. Maximov², Yu.M. Shernyakov², N.V. Kryzhanovskaya², A.E. Zhukov², A.P. Vasilev², E.S. Semenova², V.M. Ustinov², N.N. Ledentsov³, A.R. Kovsh³, V.A. Shchukin³, S.S. Mikhrin³, and D. Bimberg¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin — ²Ioffe Physico-Technical Institute, St. Petersburg — ³NL Nanosemiconductor GmbH, Dortmund

In recent years semiconductor lasers with self organised quantum dots as an active media grown on GaAs demonstrated theoretically predicted superior characteristics. Until now special emphasis was placed on GaAs-based QD lasers emitting at the datacom and telecom wavelength of 1.3 µm. Here we report on QDs emitting at 1.5 µm using the novel concept of metamorphic growth. The active region consists of InAs/InGaAs QDs, grown on top of a metamorphic InGaAs layer deposited on GaAs. Such devices demonstrate 220 mW single transverse mode cw operation as well as 800 mW single transverse mode pulsed operation, limited only by power supply and showing no sign of filamentation. Small signal modulation and eye pattern back-to-back measurements have been performed at room temperature and show the feasibility to use these devices for 2.5 Gbit/s data transmission. Aging tests showed more than 800 h of operation at 50 mW with less than 10% decrease in output power.