Dresden 2006 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 22: Semiconductor laser II

HL 22.6: Vortrag

Dienstag, 28. März 2006, 16:30–16:45, BEY 154

Study of the dark line defects caused by the catastrophic optical mirror damage in broad area red-emitting high-power AlGaInP lasers — •Marwan Bou Sanayeh, Arndt Jaeger, Wolfgang Schmid, Sönke Tautz, and Klaus Streubel — OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg

Red-emitting AlGaInP lasers are being used in many applications such as optical discs, barcode readers, and color printers. Moreover, AlGaInP high-power broad area lasers have found usage in display technology and especially in the medical field, where they are required to show an outstanding performance and long-term reliability of many thousand hours. However, compared to infrared-emitting high-power AlGaInAs lasers, AlGaInP lasers are still lacking behind in showing high output powers, one reason is due to their low catastrophic optical mirror damage (COMD) levels. Therefore, studying the COMD in these lasers is of utmost importance to improve their performance and reliability.

In this work, we present deep analysis of the COMD on broad area red-emitting high power 650 nm AlGaInP lasers by studying the dark line defects (DLDs) caused by the COMD at the mirror facets and their propagation in the active region using micro-photoluminescence mapping and scanning electron microscopy.