Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 26: II-VI semiconductors II
HL 26.12: Vortrag
Dienstag, 28. März 2006, 18:00–18:15, POT 51
Electrical characterization of deep acceptor states in N implanted ZnO single crystals — •H. von Wenckstern1, H. Schmidt1, R. Pickenhain1, G. Biehne1, M. Brandt1, G. Brauer2, M. Lorenz1, and M. Grundmann1 — 1Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig — 2Institut für Ionenstrahlphysik und Materialforschung, FZ Rossendorf, Postfach 510119, D-01314 Dresden
ZnO is investigated again in the past few years with enormous effort due to, e.g., the availability of ZnO substrate material or the promising material properties of ZnO such as the high exciton binding energy or the radiation hardness. Up to now, several deep electron traps in ZnO have been characterized electrically. To our knowledge there do not exist any reports concerning elctrical characterization of deep acceptor-like states in ZnO. We report in this contribution on acceptor-like states in ZnO investigated by deep level transient spectroscopy (DLTS). For that, a ZnO single crystal was implanted by N+ ions using an acceleration voltage of 150 keV. The crystal was annealed prior to the electrical characterization for 30 min at 500∘C in an oxygen ambient to reduce damage caused by implantation. Scanning capacitance microscopy measurements on the implanted side of the sample revealed p-type conduction. With that, the observation of both electron and acceptor-like defects is possible. The DLTS measurements confirmed the existence of the electron traps E3 and E4. Additionally, we were for the first time able to characterize a deep acceptor state labelled W2. The thermal activation energy of W2 is estimated to be 260 - 280 meV.