Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 29: Transport properties II
HL 29.4: Vortrag
Mittwoch, 29. März 2006, 17:45–18:00, HSZ 01
In-plane electron tunneling between two one-dimensional — •Jean-Laurent Deborde1, Saskia F. Fischer1, Ulrich Kunze1, Dirk Reuter2, and Andreas D. Wieck2 — 1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, Germany — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany
Recently, we have introduced a lateral one-dimensional (1D) to two-dimensional (2D) tunneling structure whose thin leaking potential barrier [1] was prepared by means of atomic-force microscope lithography [2]. This gate-voltage controlled device enables to probe the 1D density of states by the tunneling conductance. In the present work, we apply the same lithography technique to produce an in-plane 1D-to-1D tunneling device. The samples are fabricated on a high-mobility GaAs/AlGaAs heterostructure. The device consists of two adjacent 1D waveguides (115 nm and 120 nm wide, both 430 nm long) separated by a thin 50 nm wide and 10 nm deep groove. A Schottky-gate is deposited on top of the device in order to control the transmission through the barrier as well as the electron density inside the waveguides. At 4.2 K, each quantum wire shows conductance quantization as characteristic of 1D transport. Energy subband separations of both waveguides are investigated from the conductance under dc drain voltage. The application of a dc bias across the barrier shows signatures of tunnel coupling between the 1D subbands in the two quantum wires.
[1] J.-L. Deborde et al., EP2DS-16 2005, Physica E (in press)
[2] U. Kunze, Supperlatt. Microstruct. 31, 3 (2002)