Dresden 2006 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 3: III-V semiconductors I

HL 3.10: Vortrag

Montag, 27. März 2006, 12:30–12:45, POT 51

Nitrogen induced properties in Ga_1−xIn_xN_yAs_1−y observed by cross-sectional scanning tunneling microscopy — •D. Martin¹, V. Vossebürger¹, L. Ivanova¹, A. Lenz¹, R. Timm¹, H. Eisele¹, M. Dähne¹, O. Schumann², L. Geelhaar², and H. Riechert² — ¹Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — ²Infineon Technologies, Corporate Research Photonics, 81730 München, Germany

The incorporation of nitrogen at low concentrations of up to 5% in GaInAs alloys induces a massive redshift in emission wavelength. In this way semiconductor laser diodes can reach the industrially important emission wavelengths of 1.3 µm and 1.55 µm. In order to improve the efficiency of these devices, a detailed investigation of the spatial and electronical properties of the GaInNAs alloy induced by nitrogen and indium atoms is required.
GaInNAs layers with different In and N concentrations embedded in GaAs were grown using molecular beam epitaxy. Cross-sectional scanning tunneling microscopy was used to study the spatial composition of GaInNAs alloys on an atomic scale. From high resolution images of the Ga_1−xIn_xN_yAs_1−y(110) surface (with 0.013 ≤ x ≤ 0.087 and 0.004 ≤ y ≤ 0.029), details on the spatial distribution of indium and nitrogen atoms were derived.
This work was supported by the SFB 296 and project Da 408/8 of the DPG.