Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 3: III-V semiconductors I

HL 3.3: Vortrag

Montag, 27. März 2006, 10:45–11:00, POT 51

Carbon doped high mobility hole gases — •Christian Gerl, Johannes Bauer, Ursula Wurstbauer, and Werner Wegscheider — Universität Regensburg, Institut für Experimentelle und Angewandte Physik, D- 93040 Regensburg

Two dimensional hole gases (2DHGs) in the GaAs/AlGaAs heterosystem are of renewed interest since their quality has been increased by utilizing Carbon as an acceptor for MBE growth [1, 2]. They exhibit a pronounced Rashba effect, a mechanism that is proposed for spintronic applications in which a macroscopic electric field gives rise to a spin splitting of subbands for finite values of k [3]. The Shubnikov-de-Haas effect can be used to determine the individual subband populations. We introduce Carbon doped 2DHGs in the (100) and (110) crystallographic direction in various structure designs with low temperature mobilities beyond 10⁶cm²/Vs, grown in our MBE system. Applying a surface gate bias to the samples the tunability of the Rashba induced spin splitting as well as the density dependence of the hole mobility is analyzed.

[1] B. Gribic, Appl. Phys. Lett. 85, 2277 (2004) [2] C. Gerl, Appl. Phys. Lett. 86, 252105 (2005) [3] Y. A. Bychkov, J. Phys. C 17, 6039 (1984)