Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 36: Optical properties
HL 36.4: Vortrag
Mittwoch, 29. März 2006, 17:00–17:15, POT 151
1.55 µm luminescence from InAs/InxGa1−xAs1−yNy quantum dots grown on GaAs substrates — •Mirja Richter1,2, Benjamin Damilano1, Jean Massies1, Jean-Yves Duboz1, Dirk Reuter2, and Andreas D. Wieck2 — 1Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, CNRS, Sophia-Antipolis, F-06560 Valbonne, France — 2Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany
Self-assembled InAs quantum dots (QDs) encapsulated with an InxGa1−xAs1−yNy (GINA) layer were grown by molecular beam epitaxy on GaAs substrates. The objective is to get efficient 1.55 µm emission from these nanostructures. The interest of adding nitrogen to the classical system InAs/InxGa1−xAs is that it decreases the bandgap of InxGa1−xAs with an enormous band bowing but also compensates parts of the strain. However, adding nitrogen introduces a high density of point defects which results in degraded photoluminescence (PL) properties. Fortunately, the density of these defects can be decreased by rapid thermal annealing (RTA). The growth process was optimized including a change in growth temperature and rate for the QDs and the GINA layer. RTA was carried out at optimized temperatures. Thereby we achieve high intensity PL emission in the 1.55 µm range with a small full width at half maximum from these InAs/GINA QDs. Finally, studies of the growth on focussed ion beam structured doping regions will be presented.