Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 40: Quantum dots and wires: Optical properties III
HL 40.4: Vortrag
Donnerstag, 30. März 2006, 11:45–12:00, POT 151
Optical properties of semiconductor microcavities — •J. Wiersig1, N. Baer1, P. Gartner1, F. Jahnke1, and M. Hentschel2 — 1Institut für Theoretische Physik, Universität Bremen,* 28334 Bremen — 2Universität Regensburg
Optical microcavities are fundamental tools to study and tailor the emission characteristics of semiconductor quantum dots. The dielectric environment allows to enhance or inhibit light-matter interaction by modifying the optical density of states available for optical transitions, and it permits directed emission of photons by changing the spatial profile of the optical modes. Both aspects will be studied numerically for two different sorts of cavities: micropillars and microdisks with air holes. The spatial profile of the electromagnetic field, quality factors and Purcell factors of micropillars are computed using a vectorial transfer matrix approach. The influences of conical deformations of the boundary, layer-thickness fluctuations and residual absorption are investigated. Microdisks with air holes are analyzed using the extended boundary element method. Unidirectional light emission and ultra-high quality factors are observed. This surprising finding is explained by enhanced dynamical tunneling near an avoided resonance crossing.