Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 42: Quantum dots and wires: Preparation and characterization I
HL 42.7: Vortrag
Donnerstag, 30. März 2006, 12:30–12:45, POT 51
HR-TEM characterization of InGaAs Nanowhiskers — •Daniela Sudfeld1, Jochen Kästner1, Günter Dumpich1, Ingo Regolin2, Victor Khorenko2, Werner Prost2, Franz Josef Tegude2, Stephan Lüttjohann3, Cedrik Meier3, and Axel Lorke3 — 1Departments of Physics, Experimental Physics, AG Farle, University of Duisburg-Essen, Lotharstr. 1, D-47048, Duisburg, Germany — 2Solid State Electronics Dept., University of Duisburg-Essen, Lotharstr. 55, ZHO, D-47048 Duisburg, Germany — 3Departments of Physics, Experimental Physics, University of Duisburg-Essen, Lotharstr. 1, D-47048, Duisburg, Germany
InxGa1−xAs nanowhiskers were grown by metal-organic vapour-phase epitaxy (MOVPE) on (111)B GaAs substrates using the vapour-liquid-solid growth mode. The diameter of the nanowhiskers was defined by monodisperse gold nanoparticles deposited on the GaAs substrate. The whiskers have been analyzed by high-resolution X-ray diffractometry (HR-XRD), micro-photoluminescence (µ-PL) and high-resolution transmission electron microscopy (HR-TEM) including energy-dispersive X-ray spectroscopy (EDS). This study is focussed to determine the lattice structure and the composition of the nanowhiskers. A detailed analysis of the lattice structure by high-resolved bright-field images reveal a fcc (111) phase as resulting from XRD measurements. Using the law of Vegard an indium concentration of 27.6 atom% has been determined in good agreement with our EDS-studies. In addition, EDS line scans perpendicular to the growth direction indicate a homogeneous growth and the presence of indium inside the seed gold particle.