Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 44: Si/Ge

HL 44.3: Vortrag

Donnerstag, 30. März 2006, 12:45–13:00, BEY 118

Ultra-thin polycrystalline silicon layers on glass substrates — •Michael Scholz, Tobias Antesberger, Sebastian Gatz, Mario Gjukic, and Martin Stutzmann — Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany

An emerging method for the low-temperature preparation of polycrystalline silicon (poly-Si) layers with reasonable structural and electrical properties on non-crystalline substrates is the aluminum-induced layer exchange (ALILE) process. To this end, a bilayer structure of aluminum (Al) and amorphous silicon (a-Si) is deposited e.g. on a glass substrate and heated to temperatures below the eutectic temperature of the binary Al-Si system (577 ^∘C). If the layers a separated by a thin oxide (aluminum oxide or silicon dioxide) the two layers exchange their respective positions and a coherent poly-Si film is formed.

The preparation of these films was investigated as a function of the annealing temperature and the overall thickness of the layer system, respectively. In addition, the optical and the electrical properties will be discussed.