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HL: Halbleiterphysik

HL 44: Si/Ge

HL 44.4: Talk

Thursday, March 30, 2006, 13:00–13:15, BEY 118

MOCVD of Epitaxial Germanium Nanowires on Silicon — •Tim Echtermeyer, Stephan Senz, Volker Schmidt, and Ulrich Goesele — Max-Planck-Institute of Microstructure Physics, Weinberg 2 06120 Halle, Germany

We present results on germanium nanowires grown epitaxially on a silicon <111> substrate with the help of a metalorganic germanium precursor. The nanowires produced by this novel approach are investigated by transmission and scanning electron microscopy. In addition, preliminary results regarding silicon/germanium heterostructure nanowires are presented.