Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 49: Devices
HL 49.2: Vortrag
Donnerstag, 30. März 2006, 15:30–15:45, BEY 154
Comparison of carbon nanotube field-effect-transistor architectures: Schottky-barrier, conventional and tunneling CNFETs — •Joachim Knoch1, Joerg Appenzeller2, Yu-Ming Lin2, Zhihong Chen2, and Phaedon Avouris2 — 1Institute of Thin Films and Interfaces, ISG1-IT, Forschungszentrum Juelich, D-52425 Juelich — 2IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
Carbon nanotube field-effect-transistors (CNFETs) have recently attracted an increasing attention as building blocks of a future nanoelectronics and tremendous progress towards a real application has been made. Here, we present experimental as well as simulation results on three different CNFET device designs: the Schottky-barrier CNFET (SB-CNFET) with metallic source/drain contacts, the conventional CNFET (c-CNFET) with doped source/drain electrodes and the tunneling CNFET (t-CNFET) based on band-to-band tunneling. While a c-CNFET, in principle, exhibits a superior on- and off-state performance if compared to SB-CNFET it is shown that ultimately scaled c-CNFETs suffer from a charge pile-up that strongly deteriorates the device’s off-state. In contrast, the t-CNFET allows for an excellent off-state. Due to the smallness of nanotubes (both, in terms of geometry as well as the one-dimensionality of electronic transport properties) the t-CNFET design makes possible field-effect transistor devices with an inverse subthreshold slope significantly smaller than 60mV/dec while at the same time, an excellent on-state is achievable.