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HL: Halbleiterphysik

HL 49: Devices

HL 49.5: Talk

Thursday, March 30, 2006, 16:15–16:30, BEY 154

Dynamic and static properties of quantum-dot based semiconductor optical amplifiers at 1.3 µm — •Matthias Lämmlin¹, G. Fiol¹, M. Kuntz¹, F. Hopfer¹, N.N. Ledentsov^1,2, A.R. Kovsh², A. Jacob³, A. Umbach³, and D. Bimberg¹ — ¹Institut fuer Festkoerperphysik, Technische Universitaet Berlin, PN5-2, Hardenbergstr. 36, 10623 Berlin, Germany — ²NL Nanosemiconductor GmbH, Konrad-Adenauer-Allee 11, 44263 Dortmund, Germany — ³u2t Photonics AG, Reuchlinstrasse 10/11, 10553 Berlin, Germany

Quantum dot (QD) based semiconductor optical amplifiers (SOAs) operating at 1.3 µm grown by molecular beam epitaxy containing InGaAs/GaAs QDs are presented. Static gain properties of SOAs based on 10 stacks of QDs are evaluated with respect to input power, wavelength and injection current. Measurements show a chip gain up to 24 dB with a signal-to-ASE ratio of 30 dB. The polarization dependence of these devices shows a TE/TM ratio of 8 dB. Gain measurements of SOAs (15 stacks of QDs, 4 mm long) are compared with a rate equation model. A chip gain of 26 dB is realized here. The modeling of the gain characteristics of these SOAs is matched to the performance of alike lasers and predicts a 40 dB amplification under ideal biasing and input power conditions. Using a hybrid mode-locked QD laser at 20 GHz with 710 fs pulse widths as input signal ultrafast amplification with no observable degradation of the amplified ultrashort pulse train is demonstrated. This work is funded by the SANDiE Network of Excellence of the European Commission, contract number NMP4-CT-2004-500101, and the State of Berlin in the framework of the Zukunftsfond Berlin (TOB).