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HL: Halbleiterphysik

HL 50: Poster II

HL 50.17: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Growth of cubic Al_xIn_yN and cubic Al_xGa_yIn_1−x−yN lattice-matched to GaN — •Mark Schnietz¹, Jörg Schörmann¹, Shunfeng Li¹, Jürgen Vogt², Jürgen W. Gerlach³, Donat J. As¹, and Klaus Lischka¹ — ¹University of Paderborn, Department of Physics, D-33098 Paderborn, Germany — ²Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig,Germany — ³Leibniz-Institut für Oberflächenmodifizierung Leipzig, Permoserstraße 15, D-04318 Leipzig, Germany

We report the first epitaxial growth of c-Al_xIn_yN/GaN and c-Al_xGa_yIn_1−x−yN/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates by plasma-asissted molecular beam epitaxy. Cubic Al_xIn_yN alloys can be used for the realization of lattice-matched c-AlInN/GaN Bragg mirrors due to its high difference in refractive index to GaN. The c-Al_xGa_yIn_1−x−yN alloy permits the independent control of the band gap and the lattice parameter. The ternary and quaternary films were grown at substrate temperatures of 620^∘C. Different alloy compositions were obtained by varying the flux of Al and Ga. The alloy composition was measured by Energy Dispersive X-ray Spectroscopy (EDS) and Rutherford Backscattering (RBS). X-ray reciprocal space map of asymmetric (-1-13) reflex were used to measure the lattice parameters and to verify the lattice match between the alloy and the c-GaN buffer layers.