Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.19: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Polarization properties of InGaN quantum wells grown on semipolar GaN {1-101} facets — •Martin Feneberg1, Frank Lipski1, Barbara Neubert2, Peter Brückner2, Ferdinand Scholz2, Klaus Thonke1, and Rolf Sauer1 — 1Abteilung Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Abteilung Optoelektronik, Universität Ulm, 89069 Ulm
Strong piezoelectric fields in InGaN quantum wells grown on {0001} surfaces reduce the radiative transition probability due to the quantum confined Stark effect. One possibility to enhance light output of such devices is to use nonpolar or semipolar crystal planes for quantum well growth. It is therefore desirable to gain a better understanding of the properties of quantum wells on nonpolar and semipolar facets.
We report on polarized photo- and electroluminescence emission of quantum wells grown on {1-101} side facets of selectively grown GaN stripes. The quantum wells emit light linearly polarized parallel to the <11-20> direction of the GaN crystal. This is explained by valence band splitting due to strain. Surprisingly defect-related emission at lower energies is also linearly polarized, but perpendicular to the quantum well emission. This is most likely due to preferential defect alignment during epitaxy.