Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 50: Poster II
HL 50.28: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Investigation of SnSe, SnSe2 and Sn2Se3 alloys for electronic memory applications — •Kyungmin Chung, Daniel Wamwangi, Christoph Steimer, and Matthias Wuttig — I. Institute of Physics (IA), RWTH Aachen University, 52056 Aachen, Germany
This work reports on the temperature dependence of structural and electrical properties of SnSe, SnSe2 and Sn2Se3 films studied in the search of new phase change alloys for electronic memory applications. Our results have shown large electrical contrast of a 6.0× 105 and 3.9× 106 for the SnSe2 and Sn2Se3 alloys, respectively upon phase transition. The temperature window upon which these phase transition takes place is even lower than that of Ge2Sb2Te5 (ΔT=20∘C) for the case of the Sn2Se3 (ΔT=4∘C) alloy. This could possibly suggest rapid switching. By comparing with Ge2Sb2Te5 (ρ=1mΩcm) and Ge4Sb1Te5 (ρ=3mΩcm), it can be seen that both SnSe2 and Sn2Se3 have large resistivity values in the crystalline state of 26mΩcm and 23mΩcm, respectively. This means that SnSe2 and Sn2Se3 alloys could possibly minimize the RESET current of PRAM devices. X-ray diffraction (XRD) investigations have attributed the large electrical contrast to structure transformation from the amorphous to crystalline phase. The activation energy against crystallization has also been determined for SnSe, SnSe2 and Sn2Se3 alloys to 2.01±0.11eV, 1.93±0.07eV and 0.32±0.04eV, respectively. Corresponding to the structural transitions we have determined a density change of 3.79%, 20.15% and 12.4% upon annealing by X-ray reflectometry (XRR).