Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.48: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Spin injection at metal/organic semiconductor interface — •Dean Korošak1, Bruno Cvikl1,2, and Matjaž Koželj2 — 1University of Maribor, Faculty of Civil Engineering, Chair for Applied Physics, Smetanova 17, 2000 Maribor Slovenia — 2J. Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
A theoretical investigation of a possibility of using a metal/organic semiconductor interface as a spin injector, specifically considering the role of a tunneling barrier at a metal/organic semiconductor interface serving as a spin selective mechanism. The parameters of the PCTDA electronic structure are determined from the results of the analysis of the capacitance-voltage characteristics of the ionized cluster beam deposited samples. The current spin polarization is found to critically depend on the details of the disordered interlayer the width of which and the properties can be to some extent controlled in the ionized cluster beam deposition experiment. It is shown that under the assumption of the space charge limited current through the contact the crucial parameter is the effective width of the organic layer determining the spin diffusion lenght. The structure resulting from ionized cluster beam experiment in which a thin interlayer sandwiched between the metal and organic semiconductor doped with metal clusters can be obtained is considered as a numerical example.
[1] D. Korošak, B. Cvikl, Solid St. Comm. 130, 765 (2004).
[2] B. Cvikl, M. Koželj, D. Korošak, R. Jecl, submitted to J. Appl. Phys. (2005).