Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.80: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Top-down fabrication of GaAs/AlAs nanocolumns with lateral dimensions in the sub-100nm range — •Jakob Wensorra1, Mihail Ion Lepsa1, Klaus Michael Indlekofer1, Arno Förster2, and Hans Lüth1 — 1Institut für Schichten and Grenzflächen (ISG1) und Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich — 2Fachhochschule Aachen, Abteilung Jülich, Physikalische Technik, Ginsterweg 1, 52428 Jülich
We report on a top-down fabrication technique for vertical GaAs nanocolumns with embedded AlAs barriers.
Layer stacks with double barrier resonant tunneling structures have been grown by MBE. Precise plasma etching of nanocolumns with lateral dimensions down to the sub-100nm range was achieved by using electron beam lithography and high resolution Hydrogen Silsesquioxan (HSQ) negative resist as the mask material. HSQ is also employed to planarize and physically isolate the devices. A novel non-alloyed ohmic contact based on a very thin low-temperature-grown GaAs (LT-GaAs) top layer is used for contacting the nanostructures.