Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 6: Quantum dots and wires: Transport properties I
HL 6.1: Vortrag
Montag, 27. März 2006, 10:15–10:30, BEY 118
Electrical and optical characterisation of GaN and InN Nanowires — •Thomas Richter1, Michel Marso1, Ralph Meijers1, Ratan Debnath1, Toma Stoica1,2, Raffaella Calarco1, and Hans Lüth1 — 1Institute of Thin Films and Interfaces (ISG1) and CNI - Centre of Nanoelectronic Systems for Information Technology, Research Center Jülich,52425 Jülich, Germany — 2INCDFM, Magurele, POB Mg7, Bucharest, Romania
Nanostructures such as semiconductor nanowires have an increasing interest as possible candidates for novel nanodevice concepts beyond CMOS. This is strongly motivated by their high versatility and practical applications in optical, electrical and chemical devices. Despite promising achievements by researchers all over the world, fundamental physical properties of those nanoscaled devices are still unclear. Electrical transport and optical behavior of these whiskers are interesting fields of research. We report on the reproducible growth of GaN and InN nanowires by plasma-assisted molecular beam epitaxy on Si (111) substrates. To improve the growth conditions the wires have been analysed by cathodoluminescence spectroscopy. For the electrical characterisation they have been transferred to a Si (100) substrate covered with a layer of SiO2. Subsequently single nanowire devices have been fabricated by e-beam lithography for individually chosen nanowires. Electrical transport properties of the resulting metal-semiconductor-metal nanostructures are analyzed by means of current voltage measurements in dark and under UV-illumination at different temperatures.