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Dresden 2006 – wissenschaftliches Programm

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MA: Magnetismus

MA 20: Poster: Films(1-36) Transp(37-56) Ex.Bias(57-67) Spindyn(68-80) Micromag(81-95) Particle(96-109) Imag.+Surface(110-113) Spinelectr(114-122) Theory+Micromag(123-131) Spinstr+Aniso(132-142) MagMat(143-156) Meas(157,158) MolMag+Kondo(159-162) Postdead(163-)

MA 20.6: Poster

Dienstag, 28. März 2006, 15:15–19:15, P1

Multiferroic (La,A)MnO3 / PbZr0.52Ti0.48O3 bilayers: field effect vs. strain effect — •C. Thiele1, K. Dörr1, E. Beyreuther2, A. A. Levin3, W.-M. Lin4, O. Bilani1, and L. Schultz11IFW Dresden, PF 270116, 01171 Dresden — 2IAPP, TU Dresden — 3ISP, TU Dresden — 4IFE, TU Dresden, 01062 Dresden

Magnetic transition metal oxides can be combined with ferroelectric titanates in epitaxially grown film structures [1]. This approach might offer effective access to the electric control of magnetic properties via electric field effect and induced elastic strain to the magnetic layers. Field effect transistor (FET) structures of epitaxial PbZr0.52Ti0.48O3 / (La,A)MnO3 / SrTiO3(100) (A = Sr; Ca) have been prepared using off-axis PLD with a shadow mask technique. FETs with a La0.8Ca0.2MnO3 channel show electrical modulation of the channel resistance proportional to the PZT electric polarization loop [2], which can be attributed to charge density modulation in the interface-near region of the manganite. Recording complete resistance (R) hysteresis loops in dependence on an applied gate voltage in FETs with La0.7Sr0.3MnO3 channel has given evidence for butterfly-like hysteresis being typical for in-plane strain modulation in the manganite layer [3]. R modulation depending on channel thickness is discussed. Results are compared with the effects of dynamically induced in-plane strain in epitaxial LSMO films on piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (100) substrates. This work is supported by DFG, FOR 520.

[1] H. Tabata et al., IEICE Tran. El. E80-C (1997) 918. [2] S. Mathews et al., Science 276 (1997) 238. [3] C. Thiele et al., APL 87 (2005) 162512.

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