Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
MA: Magnetismus
MA 25: Spin-Electronics I
MA 25.6: Vortrag
Donnerstag, 30. März 2006, 11:30–11:45, HSZ 103
Magnetic, structural and electronic properties of Fe implanted GaN — •Georg Talut, Helfried Reuther, Frank Eichhorn, Arndt Mücklich, and Kay Potzger — Institute of Ion Beam Physics and Material Research, Forschungszentrum Rossendorf e.V., Bautzner Landstraße 128, 01314 Dresden
The request for room-temperature diluted magnetic semiconductors resulted in a large interest in GaN containing transition metals. In contrast to the (Ga,Mn)N-system, the origin of the ferromagnetism in Fe implanted GaN is still not sufficiently investigated. The formation of secondary phases and valence states of Fe play an important role in the discussion of the source of the ferromagnetism.
In this study, the electronic, structural and magnetic properties of p-GaN implanted with Fe+ (1 - 16 · 1016 cm−2) at 350∘ C and subsequently annealed at 650∘ - 1000∘ C were examined by conversion electron Mössbauer spectroscopy, x-ray diffraction, transmission electron microscopy and magnetometry.
First experiments show ferromagnetic behaviour above room temperature in samples implanted with the highest amount of Fe. First x-ray diffraction and conversion electron Mössbauer spectroscopy measurements reveal the creation of α-Fe-clusters which are most likely responsible for the ferromagnetism.