Dresden 2006 – wissenschaftliches Programm
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MM: Metall- und Materialphysik
MM 25: Poster Session
MM 25.18: Poster
Mittwoch, 29. März 2006, 15:30–17:30, P4
Ion implantation of halogens: a promising technique for enhancing the high-temperature oxidation resistance of TiAl alloys — •Rossen Yankov1, Alexander Donchev2, Michael Schütze 2, and Edgar Richter1 — 1Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, 01314 Dresden — 2Karl-Winnacker-Institut der DECHEMA, 60486 Frankfurt/Main
Gamma-TiAl alloys (γ-TiAl) are of great interest for advanced automobile, aerospace and power generation applications due to their light weight and high strength. However, excessive oxidation occurring in these materials at temperatures above 700∘C has to date hindered their widespread use. Accordingly, in the present study, high-temperature oxidation behavior of γ-TiAl has been examined with consideration of the role of some halogens (Cl and F) in providing practically useful oxidation protection. Samples of technical γ-TiAl alloys have been treated by either beamline ion implantation or plasma immersion ion implantation (PIII) using various precursor gases. The degree of oxidation protection has been evaluated by testing ion implanted samples under conditions of isothermal and thermocyclic oxidation at 900∘C. Optimized ion implantation processing has been found to produce marked improvement in the oxidation behavior of γ-TiAl. On the basis of the results obtained, a commercially viable process for enhancing the high-temperature oxidation resistance of γ-TiAl alloys using PIII of halogens is being developed.