Dresden 2006 – wissenschaftliches Programm
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O: Oberflächenphysik
O 14: Poster session I (Adsorption, Epitaxy and growth, Phase transitions, Surface reactions, Organic films, Electronic structure, Methods) (sponsored by Omicron Nanotechnology GmbH)
O 14.27: Poster
Montag, 27. März 2006, 18:00–21:00, P2
Relaxation of thin CaF2 Films on Si(111) — •C. Deiter1, T. Weisemöller1, B. Zimmermann1, A. Gerdes2, and J. Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, D-49069 Osnabrück — 2Institut für Festkörperphysik, Universität Hannover, D-30167 Hannover
We investigated the structure of CaF2 films of various thicknesses (1nm-10nm) at different growth temperatures (500oC and 600oC) by grazing incidence x-ray diffraction (GIXRD). The intensity distribution of the crystal truncation rods was analysed by calculations based on the kinematic approximation. The crystal quality of CaF2 films on Si(111) depends on the amount of the deposited material and the processing temperature. Above a certain temperature - depending on the film thickness - the insulator starts to relax partially by forming smaller crystallites limited by dislocations and substrate step edges. In contradiction to the classical approch by a model using only one CaF2 species a simulation of lateral coexisting pseudomorphic and relaxed cristallites perfectly fit the measured data.