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Verhandlungen
Verhandlungen
DPG

Dresden 2006 – scientific programme

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O: Oberflächenphysik

O 20: Epitaxy and growth II

Tuesday, March 28, 2006, 11:15–13:00, WIL B321

11:15 O 20.1 In-situ diffraction studies of homoepitaxial electrochemical growth on Au(100) — •Klaus Krug, Jochim Stettner, and Olaf M. Magnussen
11:30 O 20.2 surface Debye Temperatur of thin Bi(111) on Si(001) — •Rabih Khanafer, Andreas Janzen, Boris Krenzer, Giriraj Jnawali, Hichem Hattab, and Michael Horn-von Högen
11:45 O 20.3 Epitaxial growth of Bi(111) on Si(001) studied by SPA-LEED: Morphology and Lattice Accomodation — •Giriraj Jnawali, Hichem Hattab, Boris Krenzer, and Michael Horn von Hoegen
12:00 O 20.4 Epitaxial growth of thin Fe-films on GaAs(110) at 80K — •L. Winking, M. Wenderoth, J. Homoth, and R. G. Ulbrich
12:15 O 20.5 Influence of strain on the dynamics of III – V semiconductor surfaces — •Hannes Guhl and Frank Grosse
12:30 O 20.6 Kinetic roughening during polymer film growth: Monte-Carlo simulations and experiments — •Christian Vree, Johanna Röder, Hans-Ulrich Krebs, and S. G. Mayr
12:45 O 20.7 Optical in situ monitoring of deoxidation of III-V-semiconductors in MOVPE — •A. Oestereich, C. Kaspari, M. Pristovsek, and W. Richter
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