Dresden 2006 – wissenschaftliches Programm
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O: Oberflächenphysik
O 29: Poster session II (Nanostructures, Magnetism, Particles and clusters, Scanning probe techniques, Time-resolved spectroscopy, Structure and dynamics, Semiconductor surfaces and interfaces, Oxides and insulators, Solid-liquid interfaces)
O 29.65: Poster
Mittwoch, 29. März 2006, 14:30–17:30, P2
Structural and electronic analysis of Hf on Si(111) surface studied by angle-scanned photoelectron diffraction — •M. F. Carazzolle1,2, M. Schürmann1,3, U. Berges3, C. Flüchter1,3, D. Weier1,3, A. de Siervo4, R. Landers2,4, G. G. Kleiman2, and C. Westphal1,3 — 1Experimentelle Physik 1 - Universität Dortmund, Otto-Hahn-Str. 4, D44221-Dortmund, Germany — 2Instituto de Fisica - Universidade Estadual de Campinas, C.P.6165, 1083-970-Campinas, SP, Brazil — 3DELTA-Dortmunder Elektronenspeicherring Test Anlage, Maria-Goeppert-Mayer-Str. 2, D44227-Dortmund, Germany — 4Laboratorio Nacional de Luz Sincrotron, C.P. 6192, 13084-971-Campinas, SP, Brazil
The development of alternative high-k gate dielectrics for future complimentary metal-oxide-semiconductor (CMOS) devices is indispensable in achieving both low leakage current and small equivalent oxide thickness. HfO2 is one possible candidate because of its high dielectric constant and high conduction band offset. On the other hand the formation of metallic Hf-silicide during the annealing process for activation is one of the most serious problems, because the electrical characteristics will be influenced drastically due to the leakage current. In this work we present a systematic electronic and structural study of the Hf-silicide formation upon annealing. We utilized XPS, LEED and angular XPD to study the surface of ultra-thin films of the Hf on Si(111). The work was performed at DELTA (Accelerator Facility at the University Dortmund) using an undulator beam line with a photon energy of 200 eV.